For those working in the field of gallium nitride (GaN) power transistors and amplifiers, this article's subtitle ("A Perspective on Transistor Modeling for GaN High-Power Amplifier Design") is ...

Air quality advisories have also been issued. National Weather Service and AccuWeather Heat indices will range between 100-110 degrees, making outdoor activities extremely hazardous.

The amplifier, engineered to meet the demands of modern C-Band high RF power applications, is built for customers in defense, aerospace, weather radar and commercial applications who require high RF ...

Imec now demonstrates a GaN-on-Si E-mode MOSHEMT that reaches a record 27.8dBm (1W/mm). output power and 66% power-added efficiency (PAE) at 13GHz and 5V. The result was obtained in a single device ...

Imec researchers have set a new benchmark in RF transistor performance for mobile applications. They present a gallium nitride (GaN) MOSHEMT (metal-oxide-semiconductor high-electron-mobility ...

Active pixel sensor (APS) architectures using two transistors per pixel are reported in this paper for high-resolution low-noise digital imaging applications. The fewer number of on-pixel elements and ...