Abstract: Charge transport and breakdown mecha- nisms of gate leakage current in lattice-matched In0.17Al0.83N/GaN high electron mobility transistors (HEMTs) were investigated by combining the current ...

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In this article, an analytical thermal conductivity model for confined nanochannel in gate-all-around silicon nanowire field-effect transistors (GAA SiNW FETs) is developed by considering the ...

Although mechanisms for the transfer of a sulfur moiety across protein–protein interfaces have been proposed based on the IscS–IscU and IscS–TusA structures, the flexibility of the catalytic cysteine ...