In recent years, an increasing trend towards GaN integration can be observed, enabled by the lateral structure of the GaN technology. A key improvement over a discrete implementation is the ...

EPC Space has announced the EPC7030MSH, a radiation-hardened 300-V GaN FET for high-voltage, high-power space applications.

Hardware Researchers develop a new technique to bond GaN transistors to a silicon chip, with the ultimate goal of having more powerful and efficient wireless transmitters ...

In this article, an exciter–quadrature–repeater transmitter pad is proposed in order to achieve high lateral misalignment tolerance and low leakage flux emission in electric vehicle wireless charging ...

The advanced semiconductor material gallium nitride will likely be key for the next generation of high-speed communication systems and the power electronics needed for state-of-the-art data centers.

These products include a high bandwidth Th-Mod optical transmitter, VPX RF over Fiber (RFoF) modules and high power amplifiers for Ka-, Ku-, X- and C-Band applications.