Reprint: R0711C Many executives are surprised when previously successful leadership approaches fail in new situations, but different contexts call for different kinds of responses. Before ...

This paper presents a simple method to extract the time constants associated with trapping effects observed in GaN HEMT devices. Instead of using specific and, sometimes, very expensive measurement ...

A high-quality GaN-based vertical light-emitting diode (LED) was successfully fabricated and transferred to an electroplated Cu substrate using strip-patterned silicon dioxide (SiO2) as a sacrificial ...

Imec now demonstrates a GaN-on-Si E-mode MOSHEMT that reaches a record 27.8dBm (1W/mm) output power and 66% power-added efficiency (PAE) at 13GHz and 5V. The result was obtained in a single device ...