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The advanced semiconductor material gallium nitride will likely be key for the next generation of high-speed communication ...
The research ' 3D-Millimeter Wave Integrated Circuit (3D-mmWIC): A Gold-Free 3D-Integration Platform for Scaled RF GaN-on-Si ...
Integrating the Schottky diode into GaN transistor helps boost power-system efficiency by reducing dead-time losses.
US researchers are creating a new fabrication process for gallium nitride chips, making them more accessible to advanced radar systems.
The well-studied NF-κB signaling system is a key mediator of the inflammatory response. Large-scale sequencing studies in ...
Abstract: GaN-on-Si transistors are put through an extensive suite of reliability tests in order to accurately assess the drift characteristics of the technology. Data is presented on DC-HTOL, RF-HTOL ...