Imec’s RF GaN-on-Si transistor achieves record efficiency and output power for an E-mode device, targeting high-efficiency 6G ...

Integrating the Schottky diode into GaN transistor helps boost power-system efficiency by reducing dead-time losses.

Belgian research hub Imec has claimed a new benchmark in RF transistor performance for mobile applications with a ...

NVIDIA collaboration news for data centers. Find out why my long-term assessment of NVTS remains quite positive.

The well-studied NF-κB signaling system is a key mediator of the inflammatory response. Large-scale sequencing studies in ...

Now researchers from University of Science and Technology of China (USTC) have demonstrated a vertical GaN PiN diode with a ...