In this paper, the concept of multirate partial differential equations (MPDEs) is applied to obtain an efficient solution for nonlinear low-frequency electrical circuits with pulsed excitation. The ...

Commercially available normally-off GaN power high-electron-mobility transistor (HEMT) devices have typically adopted a p-GaN gate structure. In the gate region, there exist a Schottky junction ...

Donald Trump's administration asked the U.S. Supreme Court on Monday to halt a judicial order blocking mass job cuts and the restructuring of agencies, part of the Republican president's campaign to ...