Recent technological advances have enabled the development of a wide range of increasingly sophisticated wearable and ...

This paper investigates extremely low-power circuits based on new Si/SiGe heterojunction tunneling transistors (HETTs) that have a subthreshold swing of . Device characteristics, as determined through ...

A simple transistor circuit offers an effective solution to this problem. The I 2 C bus is highly vulnerable due to its design — both SCL and SDA “float” at high potential and are pulled low by the ...

Instead of trying to remember lots of different dot and cross diagrams, it may help to understand how to draw them.

Abstract: Recent noise measurement from 1 Hz to 5 kHz on integrated-circuit transistors have shown an anomalous burst noise in addition to the usual noise spectrum. The terminal characteristics of the ...