The basic building block of DRAM (dynamic random access memory) is a storage cell. Each cell comprises a capacitor and a transistor and stores a single bit of data. When a bit is put into a memory ...

Learn more Micron Technology has launched its 1-beta DRAM to improve power efficiency by 15% and bit density by 35% for memory chips. This means that the Boise, Idaho-based memory chip maker is ...

NEO Semiconductor is once again announcing a new technology that hopes to revolutionize the state of DRAM memory. Today, the company unveiled two new 3D X-DRAM cell designs, 1T1C and 3T0C.

HBM (High Bandwidth Memory) is memory that features multiple DRAMs stacked vertically, connected with TSV (Through Silicon Via), so the performance of the DRAM product on the HBM memory ...

Dr. Choi projected that innovative DRAM memory structures, including 3D, 4F2, and VCT (Vertical Channel Transistor), are expected to enter mass production at the 0C nm node. The 0C nm node ...