We present here 40 nm vertical MOSFETs fabricated using the most standard CMOS process flow. At the expense of four additional (but still conventional) steps, both planar and vertical devices can be ...

A high-quality GaN-based vertical light-emitting diode (LED) was successfully fabricated and transferred to an electroplated Cu substrate using strip-patterned silicon dioxide (SiO2) as a sacrificial ...

Two approaches to a 1-aryl-4-trifluoromethyltriazole are described. Initially, a late-stage trifluoromethylation of the corresponding 1-aryl-4-iodotriazole using methyl fluorosulfonyldifluoroacetate ...

In this study, superlight adsorbent sponges (bulk density 0.016–0.049 g·cm –3) were developed based on graphene oxide (GO) cross-linked with poly (vinyl alcohol) (PVA). The interlayer spacing of the ...