An analytical drain current model is presented for the double-gate monolayer transition metal dichalcogenide (TMD) tunneling FET. The potential in the channel is obtained by applying Gauss's law to ...

We systematically study the device characteristics of the monolayer (ML) blue phosphorene metal–oxide semiconductor field-effect transistors (MOSFETs) by using ab initio quantum-transport simulations.

In this paper, we present a new analytical model for RF and microwave noise model of nanoscale double-gate MOSFET. The model is based on a compact model for charge quantization within the channel and ...