Integrating the Schottky diode into GaN transistor helps boost power-system efficiency by reducing dead-time losses.

AlGaN/GaN high electron mobility transistors (HEMTs) were fabricated with Ti/Al/X/Ti ... Similarly, InGaN/GaN multiple quantum well light-emitting diodes (MQW-LEDs) were fabricated with either ...

Abstract: N-channel metal oxide semiconductor field effect transistors (MOSFETs ... carrier lifetime in the field-induced depletion region measured from gated diodes were 9.5/spl times/10/sup 12/ ...

June 14, 2025 — Scientists at the University of Michigan have unlocked a long-standing mystery about quasicrystals exotic materials that straddle the line between the orderly structure of ...