Infineon’s rad-hard GaN HEMT is the first in-house device qualified to JANS MIL-PRF-19500/794, DLA’s highest quality grade.

Figure 1 An LPVCO with 10-octave (20 Hz to 20 kHz) tri-wave output comprises antilog pair Q1 and Q2, two-way current mirror ...

The amplifier is implemented in 90 nm mixed signal/radio frequency (RF) CMOS process using three-stage cascode RF NMOS configuration. It achieves a peak gain of 17.4 dB at 91 GHz from the measured ...