TrendForce reports that NAND Flash suppliers began reducing production in the fourth quarter of 2024, and the effects are now starting to show. In anticipation of potential U.S. tariff increases, ...

Researchers find a faster way to etch deep holes for 3D NAND Plasma-based cryo-etching technique doubles etch speed, improving efficiency Faster etching might mean cheaper storage, but real-world ...

TL;DR: Samsung plans to launch its 10th Gen V-NAND in 2026, featuring a 400-layer configuration using Bonding Vertical (BV) NAND technology for higher data storage, performance, and reliability.

Samsung Electronics is keenly exploring "hafnia ferroelectrics" as a next-generation NAND flash material, with the hope that this new material will enable stacking over 1,000 layers of 3D NAND and ...

Day-022 : SR NAND LATCH and NOR LATCH. Day-023 : SR and D FLIPFLOP. Day-024 : JK and T FLIPFLOP. Day-025 : D FLIPFLOP USING JK FLIPFLOP. Day-026 : D FLIPFLOP USING SR FLIPFLOP. Day-027 : D FLIPFLOP ...

This paper presents a novel design of ternary D-latch using carbon nanotube field effect transistors. Ternary logic is a promising alternative to the conventional binary logic design technique, since ...

Check out our coverage of the 2023 Flash Memory Summit. 3D NAND chips are the skyscrapers of the semiconductor industry, linking together layers of flash memory with short vertical interconnects ...

Devices using these new NAND chips will benefit from double speed transfers compared to the previous gen UFS 3.1 solutions. The headlining figure given by Micron is that transfers of up to 4 ...

For consumers, there's also a performance uplift. SK hynix's 238-layer NAND can achieve a data transfer speed of 2.4 gigabits per second (Gbps). That's a 50 percent jump from the previous generation.