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IEEE2d
Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability - IEEE Xplore
In this paper, we present an in-depth study of the gate leakage mechanisms and correlated breakdown of GaN-based power HEMTs with p-GaN gate, controlled by a Schottky metal/p-GaN junction. A detailed ...
IEEE4d
Low Noise with High Linearity AlGaN/GaN HEMT Using Γ-Shaped Gate for Ka-Band Applications - IEEE Xplore
Abstract: In this study, AlGaN/GaN high-electron mobility transistors (HEMT) with Γ-shaped gate structure was developed and analyzed for Ka-band application. Under the frequency of 28 GHz, the ...