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MIT researchers bond gallium nitride transistors to silicon for faster next-gen wireless devices
Gallium nitride, a semiconductor renowned for its efficiency and high-speed capabilities, has long been recognized as a ...
IEEE6d
Three-Dimensional Terahertz Tomography With Transistor-Based Signal Source and Detector Circuits Operating Near 300 GHz - IEEE Xplore
In this paper, three-dimensional (3-D) terahertz (THz) tomography was demonstrated with a signal source and imagers based on transistor circuits fabricated with standard semiconductor technologies.
C&EN7d
Flexible Black Phosphorus Ambipolar Transistors, Circuits and AM Demodulator | Nano Letters - ACS Publications
High-mobility two-dimensional (2D) semiconductors are desirable for high-performance mechanically flexible nanoelectronics. In this work, we report the first flexible black phosphorus (BP) ...
IEEE22d
Enabling Selective and Tunable Weight Updates in All-InGaZnO 3-Transistor 1-Capacitor Synaptic Circuits for On-Chip Training - IEEE Xplore
This approach is experimentally validated through an all-InGaZnO (IGZO) thin-film transistor (TFT) 3-transistor 1-capacitor (3T1C) synaptic circuit. IGZO TFTs are specifically chosen for their ability ...
techxplore24d
Scalable method creates self-healing, stretchable transistors and circuits - Tech Xplore
The scalable method to create self-healing stretchable transistors and circuits introduced by the researchers could support the development of implantable devices that can measure electrophysiological ...
World Scientific29d
Write Assist SRAM Cell with Asymmetrical Bitline Access Transistors for Enhanced Data Stability and Write Ability | Journal of Circuits, Systems and Computers
A novel six-transistor static random-access memory (6T SRAM) cell is proposed in this paper for enhancing the data stability and write ability as compared to the conventional memory circuits.