Abstract: We propose a novel 3D Charge Coupled Device (CCD) for high density block addressable buffer memory with IGZO channel and integrable in 3D NAND Flash string architecture. To this purpose, we ...

In this study, we have realized a monolithic silicon carbide (SiC) power integrated circuit (IC) integrating a 1.2 kV-class trench gate vertical metal-oxide-semiconductor field-effect transistor ...