Silicon nanowires, prepared by electroless chemical etching, are used to fabricate dual-gate field-effect transistors. The diameters of the nanowires vary from 40-300 nm, with a maximum aspect ratio ...

Gallium nitride, a semiconductor renowned for its efficiency and high-speed capabilities, has long been recognized as a ...

Unsupervised learning is demonstrated using a device ubiquitously found in today's technology: a transistor with high-k -metal gate. Specifically, the charge-trapping phenomenon in the high-k gate ...