For those working in the field of gallium nitride (GaN) power transistors and amplifiers, this article's subtitle ("A Perspective on Transistor Modeling for GaN High-Power Amplifier Design") is ...

In this letter, we present a multi-channel in-plane-gate field effect transistor (MC-IPGFET). In the proposed device, multiple vertically stacked two-dimensional electron gases (2DEGs) are ...