Physicists at Bielefeld University and the Leibniz Institute for Solid State and Materials Research Dresden (IFW Dresden) ...

ROHM has developed a 30 V N-channel metal-oxide semiconductor field-effect transistor (MOSFET) — AW2K21 — in a common-source ...

You can build something cheaper and more customizable with an ESP32 or a Raspberry Pi, and that's what I did. It's beautiful, ...

Physicists at Bielefeld University and the Leibniz Institute for Solid State and Materials Research Dresden (IFW Dresden) ...

A high-quality GaN-based vertical light-emitting diode (LED) was successfully fabricated and transferred to an electroplated Cu substrate using strip-patterned silicon dioxide (SiO2) as a sacrificial ...

For those working in the field of gallium nitride (GaN) power transistors and amplifiers, this article's subtitle ("A Perspective on Transistor Modeling for GaN High-Power Amplifier Design") is ...

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