NXP has underpinned its leadership in radio frequency with highly advanced QUBIC4 BiCMOS silicon technology, delivering higher levels of integration and performance at high frequencies, all in a cost ...

The new 130 nanometer (nm) silicon germanium (SiGe) bipolar complementary metal oxide semiconductor (BiCMOS) foundry technology can reduce the cost of mobile consumer products, advance high ...

The BiCMOS technology typically lags in line width compared to CMOS ... dynamic range, noise requirements. For example, when you go from 0.35 um to 0.13 um the digital part shrinks dramatically and ...

LONDON--(BUSINESS WIRE)--TowerJazz, the global specialty foundry leader and Global Invacom, a leading innovator and manufacturer of technology ... s advanced SiGe BiCMOS (SBC18) technologies ...

NXP’s SiGe:C BiCMOS QUBiC4 technology developments resulted in 3 variants: QUBiC4+: Silicon based, ideal for applications up to 5 GHz and for medium power amplification QUBiC4X: first SiGe ...

TowerJazz’s leading SiGe BiCMOS technology provides best-in-class solutions for the needs of its fast growing base of Chinese customers. TowerJazz will discuss the challenge of wireless front ...

Taiwan Semiconductor Manufacturing Company (TSMC) announced on March 1 the availability of 0.35-micron BiCMOS (bipolar-complementary metal oxide semiconductor) process technology to its customers.

Plessey Semiconductors has started developing a 0.35micron silicon germanium (SiGe) BiCMOS process technology on its 8in line at its Plymouth based semiconductor manufacturing facility. As part of its ...

In addition, this has allowed the merger of SiGe HBTs with mainstream CMOS technology to push biCMOS performance to new heights, accomplishing the integration of RF and analog/digital on the same die.

Another focus of the collaboration will be on the development of advanced SiGe BiCMOS technologies - the foundation of ... huge potential here,” said Dr. Greg U’Ren Director of RF Technology at X-FAB.