A 1.5V, 512 Mbit GDDR4 SDRAM using a 90-nm DRAM process has been developed. The data rate is 3.2 Gbps/pin, which corresponds to 12.8 GBps in x32 GDDR4 based I/O. A multi-divided architecture ...

This letter proposes a method for a broadband reflective analog predistorter (RAPD) with independently tunable gain. The predistorter is based on asymmetric loadings of a hybrid bridge. Constant-gain ...