A new technical paper titled “Exploring optimal TMDC multi-channel GAA-FET architectures at sub-1nm nodes” was published by ...

Researchers have unveiled the world's first fully two-dimensional field-effect transistor, ... "In constructing our 2D FETs so that each component is made from layered materials with van der ...

In a bold challenge to silicon s long-held dominance in electronics, Penn State researchers have built the world s first ...

Ackley Professor of Engineering Science and Mechanics have developed high performance p-type field effect transistors (FETs) ...

Saptarshi Das and Subir Ghosh’s research represents a major leap toward building thinner, faster and more energy-efficient ...

Researchers from Penn State have demonstrated a novel method of 3D integration using 2D materials. This advancement, detailed in their recent study, addresses the growing challenge of fitting more ...

Squeezing the right amount of potassium ions between the atomic layers of molybdenum disulfide can turn it from a semiconductor into a metal, superconductor or insulator Figure 1: A photograph of the ...

During the keynote speech at the IEEE International Electron Devices Meeting (IEDM) held at the end of 2024, 2D Field Effect Transistors (2D FET) and carbon nanotubes were mentioned as potential ...