As the demand for data-intensive computing grows, so too does the need for next-generation memory technologies capable of ...

Graphene has bipolar field effect. By adjusting the gate voltage to control the concentration of graphene electron and hole, the Fermi level changes and forms p-type and n-type semiconductors, and ...

Imec is a world-leading research and innovation center in nanoelectronics and digital technologies. Imec has more than 6.000 ...

Field-effect transistors (FETs), when functionalized with proper biorecognition elements (such as antibodies or enzymes), represent a unique platform for real-time, specific, label-free transduction ...

14 A is equivalent to 1.4 nm and IMEC expects it will be succeed by 10 A or 1 nm in 2029. IMEC sees that progression carrying ...

A new technical paper titled “Exploring optimal TMDC multi-channel GAA-FET architectures at sub-1nm nodes” was published by ...

One of the materials that has garnered a lot of attention as a possible qubit platform is hexagonal boron nitride (h-BN), a ...

The field effect mobility in an oxide thin film transistor (TFT) is studied theoretically. Based on a multiple-trapping and release model, a unified expression for field effect mobility is formulated ...

Scientists uncover magnetic-field control of ultrafast spin dynamics in 2D ferromagnets by Zhang Nannan, Chinese Academy of Sciences edited by Lisa Lock, reviewed by Robert Egan Editors' notes ...

Discover how Penn State’s 2D CMOS computer breakthrough paves the way for ultra-efficient, atomic-scale electronics beyond silicon.

With the goal of achieving high-performance electrically stable organic field-effect transistors (OFETs), we chemically graft a fluorinated polymer nanolayer onto the polar oxide dielectric surfaces ...

In a bold challenge to silicon s long-held dominance in electronics, Penn State researchers have built the world s first ...