By using resonant-tunneling diodes (RTDs) and high electron mobility transistors (HEMTs), we implement a new class of logic circuits that operate with multiple thresholds and multilevel output. The ...

Vishay Intertechnology, Inc. (NYSE: VSH) has introduced a new series of advanced silicon carbide (SiC) Schottky diodes aimed at boosting efficiency in high-speed, hard-switching power systems. The ...

The lack of avalanche capability is a key limitation of current lateral GaN devices. Despite the report of avalanche in vertical GaN-on-GaN devices, the high wafer cost hinders device ...