Infineon Technologies AG has introduced what it claims is the world’s first gallium nitride (GaN) power transistor with an integrated Schottky diode.

For hard-switched power topologies, Infineon is planning a 100V GaN transistors with a integrated Schottky diode. “Due to the lack of body diode in hard-switching applications, GaN-based topologies ...

Infineon Technologies has introduced the world’s first GaN power transistors with integrated Schottky diode for industrial ...

Most modern electronic devices consist of several key components: transistors, capacitors, resistors, inductors and diodes. Often, they are supplemented by additional components like crystals and ...