Recently, a research team led by Professor HUANG Xingjiu at the Institute of Solid-State Physics, the Hefei Institutes of ...

New ferroelectric material sandwiched between GaN gates, makes the transistor switch faster and more efficient, through ...

The SiC MOSFETs benefit from improvements to the component structure, based on the original double-trench design. Therefore, it achieves up to 40% lower on-resistance with notably higher robustness ...

These electrons are zippy and help the transistor switch rapidly, but they also tend to travel up towards the gate and leak out. To prevent them from escaping, the device can be capped with a ...

Recently, a research team led by Professor Huang Xingjiu at the Institute of Solid-State Physics, the Hefei Institutes of Physical Science of the Chinese Academy of Sciences, has proposed a novel ...

When Ceramic Capacitors Go Bad – Aging. Capacitor Aging applies to all Class 2 ceramic capacitors as they are built of ferroelectric materials. C0G types (Class 1) do not exhibit this aging effect, ...

A new technical paper titled “Recent Developments in Negative Capacitance Gate-All-Around Field Effect Transistors: A Review” by researchers at PKU-HKUST Shenzhen-Hong Kong Institution and Shenzhen ...

Reducing the parasitic capacitance between the gate metal and the source/drain contact of a transistor can decrease device switching delays. One way to reduce parasitic capacitance is to reduce the ...

A complex impedance measurement provides information about the local capacitance and resistance. The dielectric constant and the dopant density in semiconductors may be calculated using local ...