This second course provides a more detailed description of high-voltage Schottky and p-n diodes, starting with the semiconductor physics background needed to analyze both types of diodes. The main ...

This image shows a state-of-the-art design of GaN p-n junction diodes that has resulted in near-unity ideality factor, avalanche breakdown capability, and record-breaking power performance.

The basic building blocks of almost all of today's optoelectronic devices are p–n junction diodes, including photodetectors, light-emitting diodes (LEDs) and lasers. The demonstration of light ...

A reconfigurable device that can be a p-n diode, a MosFET or a BJT has been made by researchers at SUNY-Polytechnic Institute in Albany, New York. “We can form a single device that can perform the ...