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Piezoresistive pressure sensors are pivotal components within the vast field of microelectromechanical systems (MEMS), integrating semiconductor physics with advanced fabrication techniques to ...
A new integrated poly-SiGe-based piezoresistive pressure sensor has been directly fabricated above 0.13 µm copper (Cu) -backend CMOS technology. This represents not only the first integrated poly ...
Merit Sensor designs and manufactures compensated and uncompensated pressure-sensor packages but also the MEMS silicon die at the heart of those packages. In this webinar Scott Sidwell, former ...
SAN ANTONIO, Texas — MEMS pressure sensors promise tobe the next must-have component for smartphones and touchscreen tablets,because they impart the ability to determine altitude for ...
Oslo, Norway — Presens AS has released its PRECISE pressure sensor. Using advanced digital MEMS technology, the PRECISE sensor is suitable for applications such as calibrators and digital gauges that ...
[220+ Pages Latest Report] According to a market research study published by Custom Market Insights, the demand analysis of Global MEMS Pressure Sensor Market size & share revenue was valued at ...
The MEMS pressure sensor is manufactured using a silicone micromachined piezoresistive sensing element in a Wheatstone bridge circuit where applied pressure to the circuit gives a proportional ...
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Tech Xplore on MSNResearchers develop novel dual-mode MEMS sensor for wide-range vacuum pressure detectionA research team led by Profs. Chen Deyong and Wang Junbo from the Aerospace Information Research Institute (AIR) of the ...
French-Italian chipmaker STMicroelectronics said on Thursday it would acquire part of NXP Semiconductors' sensor unit for up to $950 million in cash.
Explore the segmented landscape of the MEMS pressure sensors market, spanning applications like medical and automotive, types such as Silicon Piezoresistive and Silicon Capacitive, and key regions ...
Imec realized an integrated poly-SiGe-based piezoresistive pressure sensor directly fabricated above 0.13 um copper-backend CMOS technology. This represents not only the first integrated poly-SiGe ...
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