High Electron Mobility Transistor (HEMT): A semiconductor device that utilises a heterostructure to create a high-mobility two-dimensional electron gas, enabling high-frequency and low-power ...

According to magnetotransport measurements, in contrast to hole-carrier transport, which has 25,000 times lower mobility at low temperatures, coherent multi-carrier transport with finite n-type ...

The key advantage of Bi₂O₂Se is its high electron mobility—280 cm²/Vs at these scales—allowing for 40% faster operation while consuming 10% less power than cutting-edge FinFETs.

According to the research team, the approach is not limited to platinum and molybdenum disulfide but can also be applied to a wide range of 2D materials and dopant atom combinations.

Apr 19, 2024: Conducting 2D polymers exhibit electron mobility comparable to graphene (Nanowerk News) Professors Kimoon Kim and Ji Hoon Shim along with Dr. Yeonsang Lee from the Department of ...

This sky-high electron mobility translates to better conductivity. That, in turn, paves the way for more efficient and powerful electronic devices that emit less heat and waste less energy.

A condition long considered to be unfavorable to electrical conduction in semiconductor materials may actually be beneficial in 2D semiconductors, according to new findings by UC Santa Barbara ...

Two-dimensional electron gas (2DEG): A high-mobility electron system confined to a two-dimensional interface between semiconductor heterostructures, which is integral to the operation of HEMTs.