Transphorm, the GaN power semiconductor specialist, has a simulation model and preliminary datasheet for its 1200V GaN-on-Sapphire FET – TP120H070WS FET which samples in Q1 2024. Transphorm, the GaN ...

The TP120H070WS FET is the only 1200 V GaN-on-Sapphire power semiconductor introduced to date, making its model the first of its kind. Its release indicates Transphorm’s ability to support ...