The Fraunhofer Institute for Applied Solid State Physics IAF develops power electronic components based on the wide-bandgap compound semiconductor gallium nitride (GaN) to enable further ...

These patented PAs support a revolutionary shift in radar architecture for defense, weather and commercial avionics. The QPA0007 and QPA0004 are the first commercially available GaN PAs that can ...

Cambridge GaN Devices’s hybrid architecture for power modules combines gallium-nitride and IGBT devices to give EV designers an efficient, affordable solution for drivetrains and accessories.