The new 130 nanometer (nm) silicon germanium (SiGe) bipolar complementary metal oxide semiconductor (BiCMOS) foundry technology can reduce the cost of mobile consumer products, advance high ...

Design Feature: October 27, 1994 Ron Cline,Philips Semiconductors When designing with the coming generations of 3.3V PLDs, an understanding of the ...

LONDON--(BUSINESS WIRE)--TowerJazz, the global specialty foundry leader and Global Invacom, a leading innovator and manufacturer of technology ... s advanced SiGe BiCMOS (SBC18) technologies ...

The BiCMOS technology typically lags in line width compared to CMOS ... dynamic range, noise requirements. For example, when you go from 0.35 um to 0.13 um the digital part shrinks dramatically and ...

NXP’s SiGe:C BiCMOS QUBiC4 technology developments resulted in 3 variants: QUBiC4+: Silicon based, ideal for applications up to 5 GHz and for medium power amplification QUBiC4X: first SiGe ...

Plessey Semiconductors has started developing a 0.35micron silicon germanium (SiGe) BiCMOS process technology on its 8in line at its Plymouth based semiconductor manufacturing facility. As part of its ...

TowerJazz’s leading SiGe BiCMOS technology provides best-in-class solutions for the needs of its fast growing base of Chinese customers. TowerJazz will discuss the challenge of wireless front ...

In addition, this has allowed the merger of SiGe HBTs with mainstream CMOS technology to push biCMOS performance to new heights, accomplishing the integration of RF and analog/digital on the same die.

Taiwan Semiconductor Manufacturing Company (TSMC) announced on March 1 the availability of 0.35-micron BiCMOS (bipolar-complementary metal oxide semiconductor) process technology to its customers.

Another focus of the collaboration will be on the development of advanced SiGe BiCMOS technologies - the foundation of ... huge potential here,” said Dr. Greg U’Ren Director of RF Technology at X-FAB.