This RF BiCMOS process, with the SiGe:C and integrated RF passive modules ... Motorola said it has demonstrated integrated HBTs in their RF BiCMOS flow, with performance of 45 GHz and 90 GHz for f+ ...

The resulting SiGe biCMOS process melds RF and analog functions ... Furthermore, the designers have refined the fabrication flow for a smooth transition to 0.18-µm design rules as the process ...

Built on top of a standard BiCMOS process flow, the new technology will also be a major step forward for sustainable DCI networking.” About ADVA ADVA is a company founded on innovation and ...

The proposed flow is similar to the ordinary digital CMOS Design Flow ... The utilized ECL standard cell library is implemented in an IHP 0.25 μm SiGe BiCMOS process. This proposed design methodology ...

The continued advancements in SiGe BiCMOS process development and sophisticated device architectures enable high-performance analog and mixed- signal circuit designs at ever-increasing frequencies ...

The Geneva, Switzerland, company, which owns several semiconductor manufacturing facilities in Europe and east Asia, has developed new silicon photonics and BiCMOS silicon-germanium ... and vice versa ...

The second library, provided for a schematic-based flow, is a 30-cell ... bandwidth for amplifier applications. The RFBC process is a 0.8 µm c-BiCMOS process that supports chips running at ...

Analog Devices’ modular BiCMOS process, developed at its Limerick design centre, will be used for industrial and automotive chips . Called iCMOS, for industrial CMOS, “what we have really done is take ...

National Semiconductor has revealed a fully-isolated silicon-on-insulator BiCMOS process for amplifiers. “We spent the last few years developing this specifically for precision analogue, aiming at low ...

Using a by now almost unimaginably large 600 nm process, the individual elements of these standard cells including their PMOS and NMOS components within the BiCMOS process can be readily ...

Plessey Semiconductors has started developing a 0.35micron silicon germanium (SiGe) BiCMOS process technology on its 8in line at its Plymouth based semiconductor manufacturing facility. As part of its ...