Ackley Professor of Engineering Science and Mechanics have developed high performance p-type field effect transistors (FETs) ...

Researchers have unveiled the world's first fully two-dimensional field-effect transistor ... conventional FETs made from silicon, these 2D FETs suffer no performance drop-off under high voltages ...

In a bold challenge to silicon s long-held dominance in electronics, Penn State researchers have built the world s first ...

Saptarshi Das and Subir Ghosh’s research represents a major leap toward building thinner, faster and more energy-efficient ...

Researchers from Penn State have demonstrated a novel method of 3D integration using 2D materials. This advancement, detailed in their recent study, addresses the growing challenge of fitting more ...

Squeezing the right amount of potassium ions between the atomic layers of molybdenum disulfide can turn it from a semiconductor into a metal, superconductor or insulator Figure 1: A photograph of the ...

“When fabricating bottom-contact ferroelectric field-effect transistors by 2D material exfoliation, wide electrode width is preferred to improve the overall yield,” said Tokyo Tech. “However, ...

Two-dimensional van der Waals heterostructures (2D vdW HSs) can be constructed by stacking different 2D materials together in nearly endless ways, and have significantly enriched the 2D materials ...